An Investigation into the Effects of RTA Processing on Low Frequency Noise and Other Characteristics of CMOS FETs-Reference-Cited by-同舟云学术

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An Investigation into the Effects of RTA Processing on Low Frequency Noise and Other Characteristics of CMOS FETs

Published:1989 Issue: Volume: Page:557-560
ISSN:
Container-title:ESSDERC ’89
language:
Short-container-title:

Author:

Murray D. C.,Carter J. C.,Evans A. G. R.,Gougam A.,Altrip J. L.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-52314-4_115

Reference8 articles.

1. J.Y.C Sun et al., Proc. 18th ESSDERC Conf., Journal de Physique, pp C4_401 – 404, 1988

2. D.C. Murray et al., Semicond. Sci. Technol., 4, 393–398,1989

3. M.J. Hart and A.G.R. Evans, Semicond. Sci. Technol, 3, 421–36, 1988

4. C.Cox, AERE R10642 (HMSO), 1982

5. A.L.McWhorter, Semiconductor Surface Physics (Univ. Pennsylvania Press), 207–228, 1956

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