Noise and electrical characterisation of e-beam rapid isothermally annealed n-channel MOSFETS-Reference-Cited by-同舟云学术

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Noise and electrical characterisation of e-beam rapid isothermally annealed n-channel MOSFETS

Published:1989-05-01 Issue:5 Volume:4 Page:393-398
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Murray D C,Evans A G R,Altrip J L,Carter J C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/4/i=5/a=011/pdf

Reference34 articles.

1. Rapid thermal processing in semiconductor technology

2. Oxide charges induced in thermal silicon dioxide by scanning electron and laser beam annealing

3. Rapid electron-beam isothermal processing of arsenic-implanted NMOS devices

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation Effects and Low-Frequency Noise in Silicon Technologies;Low Temperature Electronics;2001

2. Low-frequency noise spectroscopy;IEEE Transactions on Electron Devices;1994

3. Shallow defects responsible for GR noise in MOSFETs;IEEE Transactions on Electron Devices;1991

4. The effects of RTA on CMOS devices;Semiconductor Science and Technology;1990-07-01

5. Increase of low-frequency-noise-generating defects in today's CMOS and BiCMOS technologies;Materials Science and Engineering: B;1989-10

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