Capability of DICE Circuit to Withstand Ionizing Radiations
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
https://link.springer.com/content/pdf/10.1007/s11277-021-08848-8.pdf
Reference17 articles.
1. Tan, J., Büttgen, B., & Theuwissen, A. J. P. (2012). Analyzing the radiation degradation of 4-transistor deep submicron technology CMOS image sensors. IEEE Sensors J., 12(6), 2278–2286.
2. Do, E., Liberali, V., Stabile A., & Calligaro, C. (2009). Layout-oriented simulation of non-destructive single event effects in CMOS IC blocks. European Conference on Radiation and Its Effects on Components and Systems, 2009, 217–224. https://doi.org/10.1109/RADECS.2009.5994583.
3. Farjallah, E., Gherman, V., Armani, J., & Dilillo, L. (2018). Evaluation of the temperature influence on SEU vulnerability of DICE and 6T-SRAM cells. 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2018, 1–5. https://doi.org/10.1109/DTIS.2018.8368578.
4. Le Dinh Trang Dang et al. (2017). “We-Quatro: Radiation-hardened SRAM cell with parametric process variation tolerance”. IEEE Transactions on Nuclear Science, 64(9).
5. Kumar, H., & Tomar, V. K. (2021). A review on performance Evaluation of different Low Power SRAM cells in Nano-scale Era. Wireless Personal Communication, 117, 1959–1984.
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