Effect of grain boundary on electric performance of ZnO nanowire transistor with wrap-around gate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11771-011-0795-2.pdf
Reference15 articles.
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3. HSUEH T J, HSU C L, CHANG S J, CHEN I C. Laterally grown ZnO nanowire ethanol gas sensors [J]. Sensors and Actuat B, 2007, 126(2): 473–477.
4. HUA Guo-min, ZHANG Ye, ZHANG Jun-xi, CAO Xue-li, Xu Wei, ZHANG Li-de. Fabrication of ZnO nanowire arrays by cycle growth in surfactantless aqueous solution and their applications on dye-sensitized solar cells [J]. Material Letter, 2008, 62(25): 4109–4111.
5. DIMITRIADIS C A, KIMURA M, MIYASAKAB M, INOVEB S, FARMAKISC F V, BRINC J, KAMARINOSC G. Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors [J]. Solid-State Electronics, 2000, 44(11): 2045–2051.
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