Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions-Reference-Cited by-同舟云学术

Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions

Published:1991-01 Issue:1 Volume:20 Page:79-90
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Camassel J.,Laurenti J. P.,Juillaguet S.,Wolter K.,Deschler M.,Ambross S.,Grüter K.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02651969.pdf

Reference26 articles.

1. For a general review, see for instance: “Handbook on Semiconductors, Vol. 3: Materials, Properties and Preparation,” North Holland Ed., Amsterdam (1980).

2. S. D. Herse, M. Baldy, P. Assenat, D. Hyghe, M. Bonnet and J. P. Duchemin, J. Phys.43, C5–119 (1982).

3. M. Razeghi, “The MOCVD challenge, Vol. 1: A survey of GalnAsP-InP for photonic and electronic applications,” Adam Hilger, Bristol (1989).

4. K. Grüter, M. Deschler, H. Jürgensen, R. Beccard and P. Balk, J. Cryst. Growth94, 607 (1989); also see: M. Deschler, R. Beccard, K. Grüter and P. Balk, Inst. Phys. Conf. Series,106, 51 (1990) and Refs. therein.

5. D. J. Ashen, P. J. Dean, D. T. J. Hurle, J. B. Mullin, A. M. White and P. D. Greene, J. Phys. Chem. Solids36,1041 (1975).

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