The impact of deep acceptors on the performance of VPE-GaAs X-ray detectors-Reference-Cited by-同舟云学术

The impact of deep acceptors on the performance of VPE-GaAs X-ray detectors

Published:1998-06 Issue:1 Volume:410 Page:92-95
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Rogalla M,Lien Y,Percival R,Hornung M,Ludwig J,Irsigler R,Runge K,Söldner-Rembold A,Meinhardt J,Feldgen T,Fiederle M,Benz K.W

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

2. Gallium Arsenide and Related Compounds;Irsigler,1995

3. Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions

4. AIXTRON GmbH, Semiconductor Technology, Kackerstr. 15–17, 52072 Aachen, Germany.

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