Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors-Reference-Cited by-同舟云学术

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Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

Published:1984-02 Issue:2 Volume:33 Page:63-76
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Schubert E. F.,Ploog K.,D�mbkes H.,Heime K.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00617610.pdf

Reference36 articles.

1. R. Dingle, H.L. Störmer, A.C. Gossard, W. Wiegmann: Appl. Phys. Lett.33, 665 (1978)

2. H.L. Störmer, A. Pinczuk, A.C. Gossard, W. Wiegmann: Appl. Phys. Lett.38, 691 (1981)

3. Spec. Publ.;K. Klitzing von,1981

4. D.C. Tsui, H.L. Störmer, A.C. Gossard: Phys. Rev. B25, 1405 (1982)

5. D.C. Tsui, H.L. Störmer, A.C. Gossard: Phys. Rev. Lett.48, 1559 (1982)

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