High-temperature diffusion of phosphorus and boron in silicon via vacancies or via self-interstitials?
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry,General Engineering
Link
http://link.springer.com/content/pdf/10.1007/BF00894994.pdf
Reference66 articles.
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2. D.L. Kendall, D.B. De Vries: InSemiconductor Silicon, ed. by R.R. Haberecht and E.C. Kern (The Electrochemical Society, New York 1969) p. 358
3. D. Shaw: Phys. Stat. Solidi B72, 11 (1975)
4. J.A. Van Vechten: Phys. Rev. B17, 3197 (1978)
5. A. Seeger, K.P. Chik: Phys. Stat. Solidi29, 455 (1968)
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