Self- and impurity diffusion in Ge and Si
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference63 articles.
1. Diffusion Mechanisms and Point Defects in Silicon and Germanium
2. and , in: Semiconductor Silicon, Ed. and , Electrochem. Soc., New York 1969 (p. 358).
3. in: Atomic Diffusion in Semiconductors, Ed. Chap. 5, Plenum Press, London 1973.
4. Effect of Heavy Doping on the Self-Diffusion of Germanium
5. The effect of heavy doping on the diffusion of impurities in silicon
Cited by 118 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Comprehensive understanding on phosphorus precipitation in heavily phosphorus-doped Czochralski silicon;Journal of Applied Physics;2023-10-17
2. First-principles study of radiation defects in silicon;Computational Materials Science;2022-05
3. In Situ Positron Annihilation Spectroscopy Analysis on Low‐Temperature Irradiated Semiconductors, Challenges and Possibilities;physica status solidi (a);2020-08-02
4. Germanium crystals;Single Crystals of Electronic Materials;2019
5. Phosphorus and Gallium Diffusion in Ge Sublayer of In0.01Ga0.99As/In0.56Ga0.44P/Ge Heterostructures;Advanced Material and Device Applications with Germanium;2018-10-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3