On the influence of a gaseous boundary layer on the oxidation of reaction-bonded silicon nitride at 1400� C-Reference-Cited by-同舟云学术

On the influence of a gaseous boundary layer on the oxidation of reaction-bonded silicon nitride at 1400� C

Published:1979-01 Issue:1 Volume:14 Page:235-237
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Barlier P.,Torre J. P.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF01028351.pdf

Reference10 articles.

1. R. W. Davidge, A. G. Evans, D. Gillingd andP. R. Wilyman, ?Special Ceramics 5?, edited by P. Popper (British Ceramic Research Association, Stoke-on-Trent, 1972) p. 329.

2. S. C. Singhal, ?Nitrogen Ceramics?, edited by F. L. Riley (Noordhoff, Amsterdam, 1977) p. 607.

3. M. E. Washburn andH. R. Baumgartner, Proceeding of the Second Army Materials Technology Conference, Hyannis, Massachussets (1973).

4. P. Walzer, M. Langer andJ. Siebels,Z. Werkstofftech. 8 (1977) 294.

5. C. Wagner,J. Appl. Phys. 29 (1958) 1295.

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