n-Graphene/p-Silicon-based Schottky junction solar cell, with very high power conversion efficiency-Reference-Cited by-同舟云学术

n-Graphene/p-Silicon-based Schottky junction solar cell, with very high power conversion efficiency

Published:2020-01-21 Issue:2 Volume:2 Page:
ISSN:2523-3963
Container-title:SN Applied Sciences
language:en
Short-container-title:SN Appl. Sci.

Author:

Wirth-Lima A. J.^ORCID,Alves-Sousa P. P.,Bezerra-Fraga W.

Funder

Fundação Cearense de Apoio ao Desenvolvimento Científico e Tecnológico

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

Springer Science and Business Media LLC

Subject

General Earth and Planetary Sciences,General Physics and Astronomy,General Engineering,General Environmental Science,General Materials Science,General Chemical Engineering

Link

http://link.springer.com/content/pdf/10.1007/s42452-020-2056-1.pdf

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4. Suhail A, Pan G, Jenkins D, Islam K (2018) Improved efficiency of graphene/Si Schottky junction solar cell based on back contact structure and DUV treatment. Carbon 129:520–526

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