Design and comparative analysis of active-loaded differential amplifier using double-gate MOSFET-Reference-Cited by-同舟云学术

Design and comparative analysis of active-loaded differential amplifier using double-gate MOSFET

Published:2022-07-06 Issue:8 Volume:4 Page:
ISSN:2523-3963
Container-title:SN Applied Sciences
language:en
Short-container-title:SN Appl. Sci.

Author:

Pillay Suvashan,Srivastava Viranjay M.^ORCID

Abstract

AbstractThis research paper proposes the design of an active-loaded differential amplifier using the Double-Gate (DG) MOSFET. This differential amplifier employs feedback and simplifies a previously designed topology by reducing it to a single-ended output instead of a differential one. Other topologies have been referred to determine the benchmark of this design work. The DG MOSFET has been utilized for its high-frequency characteristics, Radio Frequency (RF) applications, and possible advantages in scalability. Electronic device simulation determines the technical feasibility of this differential amplifier using DG MOSFET. The designed differential amplifier exhibits a differential gain of 1.7–1.8 V/V and −3 dB cut-off frequency of 42 MHz. The amplifier can be used in various applications using this methodical design process and the circuital information.

Publisher

Springer Science and Business Media LLC

Subject

General Earth and Planetary Sciences,General Physics and Astronomy,General Engineering,General Environmental Science,General Materials Science,General Chemical Engineering

Link

https://link.springer.com/content/pdf/10.1007/s42452-022-05100-1.pdf

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