Energy distribution of interface states in GaAs-Cr/Au Schottky contacts obtained from I–V characteristics-Reference-Cited by-同舟云学术

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Energy distribution of interface states in GaAs-Cr/Au Schottky contacts obtained from I–V characteristics

Published: Issue: Volume: Page:286-293
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Container-title:New Developments in Semiconductor Physics
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Author:

Horváth Zs. J.

Publisher

Springer-Verlag

Link

http://link.springer.com/content/pdf/10.1007/BFb0034437.pdf

Reference9 articles.

1. Zs.J.Horváth, Proc.Symp.Electron.Technol.'87, Sept.15–18, 1987, Budapest, Hungary, in press.

2. Zs.J.Horváth, to be published.

3. H.C.Card, E.H.Rhoderick, J.Phys.D: Appl.Phys. 4, 1589, (1971).

4. H.-H.Tseng, C.-Y.Wu, Solid-State Electron. 3.0, 383 (1987).

5. C.R.Crowell, M.Beguwala, Solid-State Electron. 14, 1149 (1971).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comment on ‘‘Current‐voltage characteristics and interface state density of GaAs Schottky barrier’’ [Appl. Phys. Lett.62, 2560 (1993)];Applied Physics Letters;1994-07-25

2. The Influence of Inversion Surface Layers on the Evaluation of the Interface State Energy Distribution from Schottky-DiodeI–U Characteristics;physica status solidi (a);1990-12-16

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