Optimizing Collector-Emitter Saturation Voltage at 3000 V Insulated Gate Bipolar Transistors Using Laser Thermal Annealing-Reference-Cited by-同舟云学术

Optimizing Collector-Emitter Saturation Voltage at 3000 V Insulated Gate Bipolar Transistors Using Laser Thermal Annealing

Published:2018-12-09 Issue:1 Volume:20 Page:7-11
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Trans. Electr. Electron. Mater.

Author:

Kim Bong-Hwan,Shin Hoon-Kyun,Park Jin Young,Chang Sang-Mok

Funder

Ministry of Land, Infrastructure and Transport of Korean government

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s42341-018-00087-2/fulltext.html

Reference6 articles.

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2. E. Suekawa, Y. Tomomatsu, T. Enjoji, H. Kondoh, M. Takeda, T. Yamada, High voltage IGBT (HV-IGBT) having p+/p− collector region, in Proceedings of ISPSD’9 (1998), pp. 249–252

3. M. Mori, K. Oyama, T. Arai, J. Sakano, Y. Nishimura, K. Masuda, K. Saito, Y. Uchino, H. Homma, A planar-gate high-conductivity IGBT (HiGT) with hole-barrier layer. IEEE Trans. Electron Devices 54(6), 1515–1520 (2007)

4. J. Won, J.G. Koo, T. Rhee, H.-S. Oh, J.H. Lee, Reverse-conducting IGBT using MEMS technology on the wafer back side. ETRI J. 35(4), 603–609 (2013)

5. N. Patil, D. Das, K. Goebel, M. Pecht, Failure precursors for insulated gate bipolar transistors, in Proceedings of the 1st International Conference on Prognostics and Health Management (2008)