Study of grown-in defects and effect of thermal annealing in Al0.3Ga0.7As and GaAs LPE layers-Reference-Cited by-同舟云学术

Study of grown-in defects and effect of thermal annealing in Al0.3Ga0.7As and GaAs LPE layers

Published:1982-03 Issue:2 Volume:11 Page:273-287
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Li Sheng S.,Lin C. Y.,Bedair S. M.,Hutchby J. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02654672.pdf

Reference10 articles.

1. S. M. Bedair, M. Lamorte, and J. Hauser, Appl. Lett.,34, 38 (1979).

2. S. M. Bedair, S. B. Phatak, and J. R. Hauser, IEEE Trans. on Elec. Devices.Ed-27, 822 (1980).

3. M. F. Lamorte and D. Abbot, Solid State Electron.26, 467 (1979).

4. S. S. Li, D. W. Schoenfeld, T. T. Chiu, C. Y. Lin, and S. M. Bedair,Proc. of the 11th Int. Conf. on Defects and Radiation Effects in Semiconductors, Inst. Phys. Conf. Ser. No. 59, 305 (1980).

5. S. S. Li ,Proc. of IEEE 15th Photovoltaic Specialists Conf., 1283 (1981).

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