Backgating in GaAs devices and integrated circuits-Reference-Cited by-同舟云学术

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Backgating in GaAs devices and integrated circuits

Published:1992-12 Issue:4 Volume:3 Page:263-271
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Salmon L. G.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF00703039.pdf

Reference26 articles.

1. D. KIEFER and J. HEIGHTLEY, in ?IEEE GaAs IC Symposium Digest? (IEEE, Piscataway, New Jersey, 1987) p. 3.

2. F. DAVIS,PC Week 8(19) (1991) 150.

3. C. P. LEE, S. J. LEE and B. M. WELCH, ?IEEE Elec. Device Lett. EDL-3 (1982) 97.

4. M. A. LAMPERT and P. MARK, ?Current Injection in Solids? (Academic Press, New York, 1970)

5. Z. M. LI, D. J. DAY, S. P. MCALISTER and C. M. HURD,IEEE Elec. Devices Lett. EDL-11 (1990) 352.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical isolation of GaAs by light ion irradiation damage;Radiation Effects and Defects in Solids;1998-10

2. Thermal stability of the electrical isolation inn-type gallium arsenide layers irradiated with H, He, and B ions;Journal of Applied Physics;1997-01-15

3. Thermal stability of the electrical isolation in n-type GaAs: Effects of damage and carrier concentrations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-01

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