Author:
Huang Hao,Jiang Chen,Gao Rui,Jiang Jinxin
Publisher
Springer Science and Business Media LLC
Reference27 articles.
1. Wu L, Yu J, Fan T et al (2020) Effects of normal load and etching time on current evolution of scratched GaAs surface during selective etching. Mater Sci Semicond Process 105:104744
2. Gao R, Jiang C, Lang H et al (2021) Experimental investigation of influence of scratch features on GaAs cleavage plane during cleavage processing using a scratching capability index. Int J Prec Eng Manuf Technol 8:761–770
3. Zhang JJ, Zhang JG, Wang ZF, Hartmaier A, Yan YD, Sun T (2017) Interaction between phase transformations and dislocations at incipient plasticity of monocrystalline silicon under nanoindentation. Comput Mater Sci 131:55–61
4. Shi J, Shi Y, Liu CR (2010) Evaluation of three dimensional single point turning at atomistic level by molecular dynamics simulation. Int J Adv Manuf Technol 8:161–171
5. Zhu PZ, Hu YZ, Ma TB et al (2011) Molecular dynamics study on friction due to ploughing and adhesion in nanometric scratching process. Tribol Lett 41:41–46
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献