Hydrogenated amorphous silicon p-doping with diborane, trimethylboron and trimethylgallium-Reference-Cited by-同舟云学术

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Hydrogenated amorphous silicon p-doping with diborane, trimethylboron and trimethylgallium

Published:1992-12 Issue:6 Volume:55 Page:573-581
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Lloret A.,Wu Z. Y.,Th�ye M. L.,Zawawi I.,Si�fert J. M.,Equer B.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00331676.pdf

Reference36 articles.

1. Y. Tawada, H. Okamoto, Y. Hamakawa: Appl. Phys. Lett. 39, 237 (1981)

2. R.C. Chittick, J.H. Alexander, H.F. Sterling: J. Electrochem. Soc. 116, 77 (1969)

3. W.E. Spear, P.G. LeComber: Solid State Commun. 17, 860 (1975)

4. V. Gross, H.W. Grueningen, E. Niemann, R. Fischer: J. Non-Cryst. Solids, 97 & 98, 643 (1987)

5. S. Kalbitzer, G. Müller, P.G. LeComber, W.E. Spear: Philos. Mag. B 41, 439 (1980)

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