Controlled Self Compliance Filamentary Memory Behavior in Al/NiFe2O4/FTO Resistive Switching Device
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
https://link.springer.com/content/pdf/10.1007/s40010-023-00842-y.pdf
Reference27 articles.
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3. Jeong DS, Schroeder H, Waser R (2007) Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack. Electrochem Solid-State Lett 10:51–53
4. Munjal S, Khare N (2018) Multilevel resistive and magnetization switching in Cu/CoFe2O 4/Pt device: coexistence of ionic and metallic conducting filaments. Appl Phys Lett 113:243501
5. Ilyas N, Li D, Li C, Jiang X, Jiang Y, Li W (2020) Analog switching and artificial synaptic behavior of Ag/SiOx:Ag/TiOx/p++-Si memristor device. Nanoscale Res Lett 15:30
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2. Two-stage filamentary mechanism in high-performance organic resistive switches;Journal of Materials Chemistry C;2023
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