Open-tube diffusion techniques for InP/LnGaAs heterojunctior bipolar transistors-Reference-Cited by-同舟云学术

Open-tube diffusion techniques for InP/LnGaAs heterojunctior bipolar transistors

Published:1986-11 Issue:6 Volume:15 Page:383-387
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Schuitemaker P.,Houston P. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02661889.pdf

Reference9 articles.

1. L. L. Chang and H. C. Casey, Solid State Electron. 7, 481 (1964).

2. S. B. Phatak, IEEE Electron Device Lett.EDL-3, 132 (1982).

3. A. J. Springthorpe and M. N. Svilans, GaAs and related Compounds, 1982, Inst, of Physics Conf. Ser. No.65, London, 589 (1983).

4. R. Schmitt, N. Arnold, K. Heime, H. Eisele, H. Haspeldo and K. W. Benz, 2nd NATO Workshop on “Materials Aspects of InP,” Lancaster University, U.K., 1983.

5. I. Camlibel, A. K. Chin, H. Guggenheim, S. Singh, L. C. van Uitert and G. J. Zydzik, J. Electrochem. Soc.131, 1687, (1984).

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