An open tube method of Zn diffusion in III-V compounds
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/31864/01482616.pdf?arnumber=1482616
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Capability of plasma‐enhanced chemical‐vapor‐deposited SiO2films as diffusion barriers on InGaAs;Journal of Applied Physics;1994-07-15
2. Open-tube zinc diffusion into indium phosphide under a hydrogen ambient: technique characterization, acceptor passivation and activation phenomena;Materials Science and Engineering: B;1991-07
3. Reproducible leaky tube diffusion of Cd in InP at 500 °C;Journal of Applied Physics;1990-08
4. Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;1990-02-20
5. Zn diffusion in doped InP: Interstitial charge state and apparent activation energy;Journal of Applied Physics;1988-12
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