Time resolved photoluminescence of Cd-doped InSe-Reference-Cited by-同舟云学术

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Time resolved photoluminescence of Cd-doped InSe

Published:1993-03 Issue:1 Volume:91 Page:25-30
ISSN:0722-3277
Container-title:Zeitschrift f�r Physik B Condensed Matter
language:en
Short-container-title:Z. Physik B - Condensed Matter

Author:

Mart�nez-Tom�s M. C.,Mu�oz V.,Andr�s M. V.,Segura A.,Chevy A.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF01316704.pdf

Reference21 articles.

1. Segura, A., Guesdon, J.P., Besson, J.M., Chevy, A.: J. Appl. Phys.54, 876 (1983)

2. Martínez, J.P., Segura, A., Valdés, J.L., Chevy, A.: J. Appl. Phys.62, 1477 (1987)

3. Julien, C., Hatzikraniotis, E., Paraskevopoulos, K.M., Chevy, A., Balkanski, M.: Solid State Ionics,18&19, 859 (1986)

4. Balkanski, M., Julien, C., Jouanne, M.: J. Power Sources20, 213 (1987)

5. Julien, C., Jouanne, M., Burret, P.A., Palkanski, M.: Solid State Ionics27, 27 (1988)

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1. Optical and structural properties of n− and p−InSe/In2O3 heterostructures;Journal of Luminescence;2020-11

2. Barrier formation in a heterostructure formed of native oxide and p-InSe. Electrical and photoelectrical properties;Semiconductors;2003-02

3. The electrical and photoelectrical properties of n-In2Se3-p-InSe heterostructures;Technical Physics Letters;2002-09

4. Investigation of nitrogen-related acceptor centers in indium selenide by means of photoluminescence: Determination of the hole effective mass;Physical Review B;1997-03-15

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