Barrier formation in a heterostructure formed of native oxide and p-InSe. Electrical and photoelectrical properties-Reference-Cited by-同舟云学术

Barrier formation in a heterostructure formed of native oxide and p-InSe. Electrical and photoelectrical properties

Published:2003-02 Issue:2 Volume:37 Page:187-193
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Drapak S. I.,Orletskii V. B.,Kovalyuk Z. D.,Netyaga V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1548663.pdf

Reference32 articles.

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