Design Principles of 22-nm SOI LDD-FinFETs for Ultra-Low-Power Analog Circuits-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Design Principles of 22-nm SOI LDD-FinFETs for Ultra-Low-Power Analog Circuits

Published:2022-01-08 Issue:3 Volume:51 Page:1029-1040
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Dixit Ankit,Kori Pavan Kumar,Rajan Chithraja,Samajdar Dip Prakash

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-021-09337-1.pdf

Reference40 articles.

1. D. Soni, D. Sharma, S. Yadav, M. Aslam, and N. Sharma, Performance Improvement of Doped TFET by Using Plasma Formation Concept. Superlattices Microstruct. 113, 97 (2018).

2. A. Dixit, S. Singh, P. N. Kondekar, and P. Kumar, Parameters Optimization of Lateral Impact Ionization MOS (LIMOS), IEEE TechSym 2014 - 2014 IEEE Students’ Technol. Symp. 376 (2014).

3. A. Dixit, D. P. Samajdar, N. Bagga, and D. S. Yadav, Performance Investigation of a Novel GaAs1-XSbx-on-Insulator (GASOI) FinFET: Role of Interface Trap Charges and Hetero Dielectric. Mater. Today Commun. 26, 101964 (2021).

4. M. Cooke, Looking to the Future with III-V FinFETs. Semicond. TODAY 11, 98 (2016).

5. V. R. Ratna, S. M, S. N, V. V, P. C. Shaker, D. M, and S. Sadulla, High Speed Energy Efficient Multiplier Using 20nm FinFET Technology. SSRN Electron. J. (2021).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing;Semiconductor Science and Technology;2024-05-22

2. Revolutionizing Semiconductor Technology: A Comprehensive Review of FinFET;2024 International Conference on Communication, Computer Sciences and Engineering (IC3SE);2024-05-09

3. Energy-Efficient Brain Floating Point Convolutional Neural Network Using Memristors;IEEE Transactions on Electron Devices;2024-05

4. A comprehensive analysis and performance comparison of CombFET and NSFET for CMOS circuit applications;AEU - International Journal of Electronics and Communications;2023-01

5. Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier;International Journal of Polymer Science;2022-07-28

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3