Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance-Reference-Cited by-同舟云学术

Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

Published:2005-06 Issue:6 Volume:34 Page:832-838
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Carmody M.,Pasko J. G.,Edwall D.,Bailey R.,Arias J.,Cabelli S.,Bajaj J.,Almeida L. A.,Dinan J. H.,Groenert M.,Stoltz A. J.,Chen Y.,Brill G.,Dhar N. K.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-005-0028-2.pdf

Reference16 articles.

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3. N.K. Dhar, M. Zandian, J.G. Pasko, J.M. Arias, and J.H. Dinan, Appl. Phys Lett. 70, 1730 (1997).

4. T.J. De Lyon, D. Rajavel, S.M. Johnson, and C.A. Cockrum, Appl. Phys. Lett. 66, 2119 (2005).

5. K. Jowikowski and A. Rogalski, J. Electron. Mater. 29, 736 (2000).

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