Morphological defects of molecular beam epitaxy-grown CdTe and CdSeTe on Si-Reference-Cited by-同舟云学术

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Morphological defects of molecular beam epitaxy-grown CdTe and CdSeTe on Si

Published:2005-06 Issue:6 Volume:34 Page:953-956
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Campo Eva M.,Hierl Thomas,Hwang James C. M.,Chen Yuanping,Brill Gregory

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-005-0049-x.pdf

Reference7 articles.

1. D.W. Snyder, S. Mahajan, E.I. Ko, and P.J. Sides, Appl. Phys. Lett. 58, 848 (1991).

2. J.C.M. Hwang, T.M. Brennan, and A.Y. Cho, J. Electrochem. Soc. 130, 493 (1983).

3. Y. Chen, G. Brill, and N.K. Dhar, J. Cryst. Growth 252, 270 (2003).

4. Y. Chen, G. Brill, and N.K. Dhar, J. Electron. Mater. 32, 723 (2003).

5. A. Million, L. Di Cioccio, J.P. Gailliard, and J. Piaguet, J. Vac. Sci. Technol. A 6, 2813 (1988).

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