Theoretical Considerations on the Optimal Performance of Sub-100 Nanometer Top-Gated Graphene Field-Effect Transistors-Reference-Cited by-同舟云学术

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Theoretical Considerations on the Optimal Performance of Sub-100 Nanometer Top-Gated Graphene Field-Effect Transistors

Published:2019-01-08 Issue:3 Volume:48 Page:1669-1678
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Do V. Nam,Le H. Anh,Vu V. Thieu

Funder

National Foundation for Science and Technology Development

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11664-018-06920-x/fulltext.html

Reference65 articles.

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov, Science 306, 666 (2004).

2. A.K. Geim and K.S. Novoselov, Nat. Mater. 6, 183 (2007).

3. Y.-M. Lin, K.A. Jenkins, A. Valdes-Garcia, J.P. Small, D.B. Farmer, and P. Avouris, Nano Lett. 9, 422 (2009).

4. Y.-M. Lin, C. Dimitrakopoulos, K.A. Jenkins, D.B. Farmer, H.-Y. Chiu, A. Grill, and Ph. Avouris, Science 327, 662 (2010).

5. L. Liao, J. Bai, R. Cheng, Y.C. Lin, S. Jiang, Y. Qu, Y. Huang, and X. Duan, Nano Lett. 10, 3952 (2010).

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