Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. A. Singh, M. Khosla, and B. Raj, Comparative analysis of carbon nanotube field effect transistors, in IEEE 4th Global Conference on Consumer Electronics (GCCE) (2015), p. 552.
2. M.A Kabir, Int. J. Adv. Mater. Sci. Eng.
3(3/4), 1 (2014).
3. S.K. Sinha and S. Chaudhary, Advantage of CNTFET characteristics over MOSFET to reduce leakage power, in 2nd IEEE International Conference on Devices, Circuits and Systems (2014), p. 1.
4. A. Al-Shaggah, A. Rjoub, and M. Khasawneh, Carbon nanotube field effect transistor models performance and evaluation, in Applied Electrical Engineering and Computing Technologies (AEECT), IEEE Jordan Conference on Applied Electrical Engineering and Computing Technologies (2013), p. 1.
5. J. Appenzeller, Y.M. Lin, J. Knoch, Z. Chen, and P. Avouris, IEEE Trans. Electron Devices 52, 2568 (2005).
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献