1. Z.R. Wang, H.Q. Wu, G.W. Burr, C.S. Hwang, K.L. Wang, Q.F. Xia, and J.J. Yang, Resistive switching materials for information processing. Nat. Rev. Mater. 5, 173 (2020).
2. F. Pan, S. Gao, C. Chen, C. Song, and F. Zeng, Recent progress in resistive random access memories: materials, switching mechanisms, and performance. Mater. Sci. Eng. R Rep. 83, 1 (2014).
3. H. Tassawar, A. Haider, Y. Chulmin, L. Hojin, B. Turgun, K. Boncheol, J. YuRim, H. Hoonhee, L.J. Hyeon, C. Changhwan, and C. Taekjib, Cellulose nanocrystal based bio-memristor as a green artificial synaptic device for neuromorphic computing applications. Adv. Mater. Technol. 7, 2100744 (2021).
4. Z.Y. Zhao, L.H. Qu, L. Wang, Q. Deng, N. Li, Z.Y. Kang, S.S. Guo, and W.X. Xu, A memristor-based spiking neural network with high scalability and learning efficiency. IEEE. Trans. Circuits-II 67, 931 (2020).
5. J.M. Zhao, Exponential stabilization of memristor-based neural networks with unbounded time-varying delays. Sci. China Inf. Sci. 64, 189205 (2021).