Author:
Nishio Johji,Okada Aoi,Ota Chiharu,Kushibe Mitsuhiro
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
15 articles.
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1. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07
2. Machine-learning enhanced thermal stability investigation of single Shockley stacking faults in 4H-SiC;Computational Materials Science;2024-06
3. Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC;Japanese Journal of Applied Physics;2024-01-04
4. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
5. Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process;Journal of Electronic Materials;2023-04-27