Fabrication of ultra-thin strained silicon on insulator-Reference-Cited by-同舟云学术

Fabrication of ultra-thin strained silicon on insulator

Published:2003-09 Issue:9 Volume:32 Page:972-975
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Drake T. S.,Chléirigh C. Ní,Lee M. L.,Pitera A. J.,Fitzgerald E. A.,Antoniadis D. A.,Anjum D. H.,Li J.,Hull R.,Klymko N.,Hoyt J. L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-003-0232-x.pdf

Reference10 articles.

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3. D. Esseni, D. Mastrapasqua, C. Fiegna, G.K. Celler, L. Selmi, and E. Sangiorgi, IEEE IEDM Technical Digest (Washington, DC: IEEE, 2001), pp. 445–450.

4. K. Uchida, H. Watanabe, A. Kinoshita, J. Koga, T. Numata, and S. Takagi, IEEE IEDM Technical Digest (San Francisco, CA: IEEE, 2002), pp. 47–50.

5. M.T. Currie, S.B. Samavedam, T.A. Langdo, C.W. Leitz, and E.A. Fitzgerald, APL 72, 1718 (1998).

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