Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector-Reference-Cited by-同舟云学术

Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector

Published:2024-01-05 Issue:3 Volume:53 Page:1561-1576
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Maurya Gyanendra Kumar,Gautam Vidushi,Ahmad Faizan,Singh Roshani,Verma Sandeep,Kandpal Kavindra,Kumar Rachana,Kumar Mahesh,Tiwari Akhilesh,Kumar Pramod^ORCID

Funder

CSTUP

SERB

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11664-023-10889-7.pdf

Reference67 articles.

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3. A.T.N.R.H.A.O.F.S.S.S.A.A.G. and M.H.A.H. F.S.Bahabri1, Investigation of the Electrical Transport Properties of TIBiTe2 Single Crystals, (n.d.).

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5. Y.L. Chen, Z.K. Liu, J.G. Analytis, J.-H. Chu, H.J. Zhang, B.H. Yan, S.-K. Mo, R.G. Moore, D.H. Lu, I.R. Fisher, S.C. Zhang, Z. Hussain, and Z.-X. Shen, Single dirac cone topological surface state and unusual thermoelectric property of compounds from a new topological insulator family. Phys. Rev. Lett. 105, 266401 (2010). https://doi.org/10.1103/PhysRevLett.105.266401.

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