Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. T. Kikkawa, K. Makiyama, T. Ohki, M. Kanamura, K. Imanishi, N. Hara, and K. Joshin, High performance and high reliability AlGaN/GaN HEMTs. Phys. Status Sol. A 206, 1135 (2009).
2. Y.C. Lin, C.H. Chang, F.M. Li, L.H. Hsu, and E.Y. Chang, Evaluation of TiN/Cu Gate metal scheme for AlGaN/GaN high-electron-mobility transistor application. Appl. Phys. Express 6, 091003 (2013).
3. O. Ambacher, B. Foutz, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, A.J. Sierakowski, W.J. Schaff, and L.F. Eastman, Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. Appl. Phys. Lett. 87, 334 (2000).
4. S. Yang, S. Huang, M. Schnee, Q.T. Zhao, J. Schubert, and K.J. Chen, Fabrication and characterization of enhancement-mode high-κ LaLuO3-AlGaN/GaN MIS-HEMTs. IEEE Trans. Electron Devices 60, 3040 (2013).
5. T.E. Hsieh, E.Y. Chang, Y.Z. Song, Y.C. Lin, H.C. Wang, S.C. Liu, S. Salahuddin, and C.C. Hu, Gate recessed quasi-normally OFF Al2O3/AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using PEALD AlN interfacial passivation layer. IEEE Electron Device Lett. 35, 732 (2014).
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Comparison of GaN HEMT Thermal Resistance Measurement Method Between Uniform Pulse Method and Modulation Method;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27