Multilayer ZnO/Pd/ZnO Structure as Sensing Membrane for Extended-Gate Field-Effect Transistor (EGFET) with High pH Sensitivity-Reference-Cited by-同舟云学术

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Multilayer ZnO/Pd/ZnO Structure as Sensing Membrane for Extended-Gate Field-Effect Transistor (EGFET) with High pH Sensitivity

Published:2017-06-05 Issue:10 Volume:46 Page:5901-5908
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Rasheed Hiba S.,Ahmed Naser M.,Matjafri M. Z.,Al-Hardan Naif H.,Almessiere Munirah Abdullah,Sabah Fayroz A.,Al-Hazeem Nabeel Z.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11664-017-5580-z/fulltext.html

Reference36 articles.

1. X.S. Fang, T.Y. Zhai, U.K. Gautam, L. Li, L.M. Wu, Y. Bando, and D. Golberg, Prog. Mater. Sci. 56, 175 (2011).

2. Q. Shao, R.H. Que, Q. M-w Shao, D.D.D.Ma Zhou, and S.T. Lee, Appl. Surf. Sci. 257, 5559 (2011).

3. X. Fang, L. Wu, L. Hu, X. Fang, L. Wu, and L. Hu, Adv. Mater. 23, 585 (2011).

4. J.Y. Li, S.P. Chang, S.J. Chang, and T.Y. Tsai, ECS Solid State Lett. 3, 123 (2014).

5. P.D. Batista, Meas. Sci. Technol. 25, 027001 (2014).

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