Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots-Reference-Cited by-同舟云学术

Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

Published:2015-06-26 Issue:10 Volume:44 Page:3962-3966
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Ma Zehao,Ooi Poh Choon,Li Fushan,Yun Dong Yeol,Kim Tae Whan

Funder

Ministry of Education, Science and Technology

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-015-3872-8.pdf

Reference27 articles.

1. T.W. Kim, Y. Yang, F.S. Li, and W.L. Kwan, NPG Asia Mater. 4, e18 (2013).

2. S.K. Hong, J.E. Kim, S.O. Kim, S.Y. Choi, and B.J. Cho, IEEE Electron Device Lett. 31, 1005 (2010).

3. D.I. Son, D.H. Park, W.K. Choi, S.H. Cho, W.T. Kim, and T.W. Kim, Nanotechnology 20, 195203 (2009).

4. D.Y. Yun, J.K. Kwak, J.H. Jung, T.W. Kim, and D.I. Son, Appl. Phys. Lett. 95, 143301 (2009).

5. J.H. Jung, J.Y. Jin, I. Lee, T.W. Kim, H.G. Roh, and Y.H. Kim, Appl. Phys. Lett. 88, 112107 (2006).

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite;Applied Sciences;2021-05-28

2. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems;Chemical Reviews;2020-03-23

3. Excess Random Laser Action in Memories for Hybrid Optical/Electric Logic;ACS Applied Electronic Materials;2020-03-19

4. Highly-reproducible nonvolatile memristive devices based on polyvinylpyrrolidone: Graphene quantum-dot nanocomposites;Organic Electronics;2017-12

5. Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites;Organic Electronics;2016-01