Modified fermi-level pinning of the (100) GaAs surface through InAs quantum dots in different stages of overgrowth-Reference-Cited by-同舟云学术

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Modified fermi-level pinning of the (100) GaAs surface through InAs quantum dots in different stages of overgrowth

Published:2000-05 Issue:5 Volume:29 Page:504-509
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Walther C.,Blum R. P.,Niehus H.,Thamm A.,Masselink W. T.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-000-0035-2.pdf

Reference18 articles.

1. T.M. Hsu, W.-H. Chang, K.F. Tsai, J.-I. Chyi, N.T. Yeh, and T.E. Nee, Phys. Rev. B 60, R2189 (1999).

2. G. Sek, J. Misiewicza, K. Ryczko, M. Kubisa, F. Heinrichsdorff, O. Stier, and D. Bimberg, Sol. State Comm. B 110, 657 (1999).

3. C. Walther, R.P. Blum, H. Niehus, W.T. Masselink, and A. Thamm, Phys. Rev. B 60, R13962 (1999).

4. S.L. Wright, R.F. Marks, S. Tiwari, T.N. Jackson, and H. Baratte, Appl. Phys. Lett. 49, 1545 (1986).

5. T. Saito, J.N. Schulman, and Y. Arakawa, Phys. Rev. B 57, 13016 (1998).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness;Applied Surface Science;2023-11

2. Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect;Applied Surface Science;2022-03

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