Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. S. Munjal, N.R. Prakash, and J. Kaur, Evolution of junctionless field effect transistors in semiconductor industry: a review. Int. J. Innov. Sci. Eng. Technol. 8, 94 (2021).
2. U.K. Das and T.K. Bhattacharyya, Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET. IEEE Trans. Electron. Devices 67, 2633 (2020).
3. A. Kumar, S. Saini, A. Gupta, N. Gupta, M.M. Tripathi, R. Chaujar, Sub-10 nm high-k dielectric SOI-FinFET for high performance low power applications. International Conference on Signal Processing and Communication 310 (2020).
4. J.C. Pravin, P. Prajoon, F.P. Nesamania, P.S. Kumar, D. Nirmal, and G. Srikesh, Nanoscale high k dielectrics for junctionless nanowire transistor for drain current analysis. J. Electron. Mater. 47, 2679 (2018).
5. S.M. Sharma, A. Singh, S. Dasgupta, and M.V. Kartikeyan, A review on the compact modeling of parasitic capacitance: from basic to advanced FETs. J. Comput. Electron. 3, 1116–1125 (2020).
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