Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates-Reference-Cited by-同舟云学术

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

Published:2016-10-21 Issue:12 Volume:45 Page:6346-6354
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Su Jie,Posthuma Niels,Wellekens Dirk,Saripalli Yoga N.,Decoutere Stefaan,Arif Ronald,Papasouliotis George D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-016-5029-9.pdf

Reference46 articles.

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