Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier-Reference-Cited by-同舟云学术

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Published:2011-10-06 Issue:12 Volume:40 Page:2355-2362
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Berthou M.,Godignon P.,Montserrat J.,Millan J.,Planson D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-011-1774-y.pdf

Reference21 articles.

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3. P. Brosselard, X. Jorda, M. Vellvehi, A. Perez-Tomas, P. Godignon, and J. Millan, 2007 European Conference on Power Electronics and Applications (2–5 Sept 2007), p. 1.

4. F. Bjoerk, J. Hancock, M. Treu, R. Rupp, and T. Reimann, Applied Power Electronics Conference and Exposition (19–23 March 2006), p. 4.

5. P. Alexandrov, W. Wright, M. Pan, M. Weiner, L. Jiao, and J.H. Zhao, Solid-State Electron. 47, 263 (2003).

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