Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates-Reference-Cited by-同舟云学术

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Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates

Published:2001-07 Issue:7 Volume:30 Page:845-849
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Wang G.,Ogawa T.,Kunimasa F.,Umeno M.,Soga T.,Jimbo T.,Egawa T.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-001-0069-0.pdf

Reference17 articles.

1. S.F. Fang, K. Adomi, S. Lyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, J. Appl. Phys. 68, R31 (1990).

2. N. Wada, S. Sakai, S. Yoshimi, Y. Shintani, and M. Fukui, Jpn. J. Appl. Phys. 33, 1268 (1994).

3. S. Sakai, T. Soga, M. Takeyasu, and M. Umeno, Appl. Phys. Lett. 48, 413 (1986).

4. T. Egawa, H. Tada, Y. Kobayashi, T. Soga, T. Jimbo, and M. Umeno, Appl. Phys. Lett. 57, 1179 (1990).

5. N. Otsuka, C. Choi, Y. Nakamura, S. Nagakura, R. Foscher, C.K. Peng, and H. Morkoc, Appl. Phys. Lett. 49, 277 (1986).

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