Properties of Bi-doped PbTe layers grown by liquid phase epitaxy under controlled Te vapor pressure-Reference-Cited by-同舟云学术

Properties of Bi-doped PbTe layers grown by liquid phase epitaxy under controlled Te vapor pressure

Published:2003-10 Issue:10 Volume:32 Page:1079-1084
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Tamura Wataru,Yasuda Arata,Suto Ken,Hosokawa Masasuke,Itoh Osamu,Nishizawa Jun-Ichi

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-003-0091-5.pdf

Reference12 articles.

1. L.R. Tomasetta and C.G. Fonstad, Appl. Phys. Lett. 24, 567 (1974).

2. Y. Horikoshi, Semiconductors and Semimetals, Vol. 22c, ed. W.T. Tsang (Orlando: Academic Press, 1985), pp. 93–151.

3. J. Nishizawa and Y. Okuno, IEEE Trans. Electron. Dev. ED-22, 716 (1975).

4. J. Nishizawa, Y. Okuno, and K. Suto, Japan Annual Reports in Electronics, Computers & Telecommunications (JARECT), Vol. 19, ed. N. Nishizawa (Tokyo: Ohmsha Ltd. and North-Holland, 1986), pp. 17–80.

5. J. Nishizawa and Y. Oyama, Mater. Sci. Eng. R121, 273 (1994).

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of heavily impurity-doped PbSnTe liquid-phase epitaxial layers grown by the temperature difference method under controlled Te vapor pressure;Journal of Crystal Growth;2017-07

2. Structural and Thermoelectric Properties of Nanostructured Nominally Stoichiometric Pb1−x Bi x Te Prepared by Mechanical Alloying;Journal of Electronic Materials;2017-05-31

3. Mid-infrared transmission imaging and spectroscopy with PbSnTe laser diodes grown with stoichiometry-controlled liquid-phase epitaxy;Infrared Physics & Technology;2015-09

4. Lasing properties of PbSnTe/PbTe double hetero mid-infrared laser diodes grown by temperature difference method under controlled vapor pressure liquid-phase epitaxy;Materials Science in Semiconductor Processing;2014-11

5. Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy;Infrared Physics & Technology;2014-11