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SiCl4-based reactive ion etching of ZnO and MgxZn1−xO films on r-sapphire substrates

  • Published:2006-06 Issue:6 Volume:35 Page:1311-1315
  • ISSN:0361-5235
  • Container-title:Journal of Electronic Materials
  • language:en
  • Short-container-title:Journal of Elec Materi

Author:

Zhu J.,Saraf G.,Zhong J.,Sheng H. F.,Yakshinskiy B. V.,Lu Y.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reactive ion etching of Ta2O5/SiO2 mixed films using CHF3 and Ar;Eighth Symposium on Novel Photoelectronic Detection Technology and Applications;2022-03-27

2. Etching of m-plane Zn(Mg)O epitaxial films and its impact on surface leakage currents;Semiconductor Science and Technology;2021-02-24

3. Highly Controlled Wet and Dry Etching of Gallium Doped (Mg, Zn) O Epilayers Grown Using Metalorganic Vapor Phase Epitaxy;Journal of The Electrochemical Society;2011

4. Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

5. Inductively coupled plasma etching of ZnO;SPIE Proceedings;2007-02-08
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