Preparation of ZrO2 dielectric layers by subsequent oxidation after Zr film deposition with negative substrate bias voltage-Reference-Cited by-同舟云学术

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Preparation of ZrO2 dielectric layers by subsequent oxidation after Zr film deposition with negative substrate bias voltage

Published:2010-06 Issue:3 Volume:16 Page:447-452
ISSN:1598-9623
Container-title:Metals and Materials International
language:en
Short-container-title:Met. Mater. Int.

Author:

Bae Joon Woo,Lim Jae-Won,Kim Sun Joong,Mimura Kouji,Miyazaki Takamichi,Uchikoshi Masahito,Isshiki Minoru

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics

Link

http://link.springer.com/content/pdf/10.1007/s12540-010-0615-5.pdf

Reference24 articles.

1. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).

2. B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C. Lee, Appl. Phys. Lett. 76, 1926 (2000).

3. H. Fukuda, M. Yasuda, and T. Iwabuchi, Appl. Phys. Lett. 61, 693 (1992).

4. B. Kralik, E. K. Chang, and S. G. Louie, Phys. Rev. B 57, 7027 (1998).

5. J. H. Hong, W. J. Choi, and J. M. Myoung, Microelectron. Eng. 70, 35 (2003).

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