Quantitative distribution analysis of dopant elements in silicon with SIMS for the improvement of process modelling-Reference-Cited by-同舟云学术

Quantitative distribution analysis of dopant elements in silicon with SIMS for the improvement of process modelling

Published:1983-01 Issue:3 Volume:314 Page:304-308
ISSN:0016-1152
Container-title:Fresenius' Zeitschrift für analytische Chemie
language:en
Short-container-title:Z. Anal. Chem.

Author:

Stingeder G.,Grasserbauer M.,Guerrero E.,Pötzl H.,Tielert R.

Publisher

Springer Science and Business Media LLC

Subject

Clinical Biochemistry,General Materials Science,General Medicine,Analytical Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF00516826.pdf

Reference21 articles.

1. Höfflinger B (1978) Großintegration: Technologie-Entwurf-Systeme. In: Grundlagen der Schaltungstechnik. Oldenbourg, München Wien

2. Antoniadis DA, Hansen SE, Dutton RW (1978) A program for IC process modelling and simulation. In: Integrated circuits laboratory. Stanford Electronic Laboratories, Technical Report No. 5019-2

3. Tielert R (1980) IEEE Trans Electron Dev ED-27, 1497

4. Ryssel H, Runge I (1978) Ionenimplantation. Teubner, Stuttgart

5. Huang RS, Ladbrooke PH (1978) Solid State Electronics 21:1123

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