Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis-Reference-Cited by-同舟云学术

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Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis

Published:1984-09 Issue:1 Volume:35 Page:27-34
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Nowak U.,Saalm�ller J.,Richter W.,Heyen M.,Janz H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00620296.pdf

Reference18 articles.

1. E.g., E.D. Palik, R.T. Holm: ?Optical Characterization of Semiconductors? inNondestructive Evaluation of Semiconductor Material and Devices, ed. by Jay N. Zemel (Plenum Press, New York 1979) p. 315

2. K.H. Nichols, R.E. Goldwasser, C.M. Wolfe: Appl. Phys. Lett.36, 601 (1980)

3. F. Alexandre, C. Raisin, M.I. Abdalla, A. Brenac, J.M. Masson: J. Appl. Phys.51, 4296 (1980)

4. J.J. Harris, B.A. Joyce, J.P. Gowers, J.H. Neave: Appl. Phys. A28, 63 (1982)

5. A. Rockett, T.J. Drummond, J.E. Greene, H. Morkoc: J. Appl. Phys.53, 7085 (1982)

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1. Extracting Complex Dielectric Properties From Reflection-Transmission Mode Spectroscopy;IEEE Access;2018

2. Characterization of the interfacial region of epitaxial TlBiSe2 thin films by infrared spectroscopy and transmission electron microscopy;Thin Solid Films;1999-09

3. Coherent and incoherent reflection and transmission of multilayer structures;Applied Physics B Photophysics and Laser Chemistry;1986-03

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