Response Mechanism of the Base-in-Well Bipolar Magnetotransistor-Reference-Cited by-同舟云学术

Response Mechanism of the Base-in-Well Bipolar Magnetotransistor

Published:2005-05 Issue:3 Volume:34 Page:160-172
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Tikhonov R. D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11180-005-0025-4.pdf

Reference57 articles.

1. Baranochnikov, M.L., Mikromagnitoelektronika (Micromagnetoelectronics), Moscow: DMK Press, 2001.

2. Roumenin, C.S., Bipolar Magnetotransistor Sensors: An Invited Review, Sens. Actuators, A, 1990, vol. 24, no.2, p. 83.

3. Kozlov, A.V., Korolev, M.A., Smirnov, S.Yu., Chaplygin, Yu.A., and Tikhonov, R.D., Triple-Collector Lateral Bipolar Magnetotransistor: Response Mechanism and Relative Sensitivity, Mikroelektronika, 2003, vol. 32, no.3, pp. 219–225.

4. Kozlov, A.V., Reveleva, M.A., and Tikhonov, R.D., Dual-Collector Lateral Bipolar Magnetotransistor: Carrier Transport and Relative Sensitivity, Mikroelektronika, 2003, vol. 32, no.6, pp. 474–480.

5. Tikhonov, R.D., The Bulk-Recombination Mechanism of Negative Relative Sensitivity Observed in Bipolar Magnetotransistors, Mikroelektronika, 2004, vol. 33, no.6, pp. 465–468.

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