Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant Implantation-Reference-Cited by-同舟云学术

Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant Implantation

Published:2005-05 Issue:3 Volume:34 Page:155-159
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Vanyushin I. V.,Gergel’ V. A.,Zimoglyad V. A.,Tishin Yu. I.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11180-005-0024-5.pdf

Reference4 articles.

1. Shur, M., Physics of Semiconductor Devices, Englewood Cliffs, N.J.: Prentice Hall, 1990. Translated under the title Fizika poluprovodnikovykh priborov, Moscow: Mir, 1992.

2. Sze, S.M., Physics of Semiconductor Devices, New York: Wiley, 1981, 2nd ed. Translated under the title Fizika poluprovodnikovykh priborov, Moscow: Mir, 1984.

3. US Patent 5 965 875, 1999.

4. Dierickx, B., Meynants, G., and Scheffer, D., Near 100% Fill Factor CMOS Active Pixels, Proc. IEEE CCD & AIS Workshop (Brugge, Belgium, 1997), p. P1.

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