Profiling the boron distribution in asymmetric n +-p silicon photodiodes and a new concept for creating selectively sensitive photocells for megapixel color-image receivers-Reference-Cited by-同舟云学术

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Profiling the boron distribution in asymmetric n +-p silicon photodiodes and a new concept for creating selectively sensitive photocells for megapixel color-image receivers

Published:2006-12 Issue:12 Volume:51 Page:1425-1430
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Vanyushin I. V.,Gergel’ V. A.,Zimoglyad V. A.,Lependin A. V.,Tishin Yu. I.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106422690612014X.pdf

Reference4 articles.

1. US Patent No. 5,965,875 (October, 1999).

2. I. V. Vanyushin, V. A. Gergel’, V. A. Zimoglyad, and Yu. I. Tishin, Mikroelektronika 34(3), 155 (2005).

3. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).

4. B. Dierickx, G. Meynants, and D. Scheffer, in Proc. IEEE CCD & AIS Workshop, Brugge, Belgium, June 5–7, 1997 (IEEE, Piscataway, 1997), p. P1.

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