Measurement of the X-Ray Sensitivity of Silicon Diodes in the Energy Region 1.8 to 5.0 KeV-Reference-Cited by-同舟云学术

Measurement of the X-Ray Sensitivity of Silicon Diodes in the Energy Region 1.8 to 5.0 KeV

Published:1974 Issue: Volume: Page:531-541
ISSN:
Container-title:Advances in X-Ray Analysis
language:
Short-container-title:

Author:

Hohlfelder Jacque J.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4613-9975-9_44.pdf

Reference5 articles.

1. Available from Solid State Radiations, Inc., 2261 South Carmelina Avenue, Los Angeles, California 90064.

2. L. W. MDrrison and K. M. Glibert, “Sandia Laboratories’ Henke X-Ray System,” Sandia Laboratories, Albuquerque, New Mexico, SLA-73-0059.

3. B. L. Henke, “Microanalysis with Ultrasoft X-Radiations,” in W. H. Mueller, Editor, Advances in X-Ray Analysis, Vol. 5, p. 285–305, Plenum Press (1962).

4. P. B. Lyons, J. A. Baron and J. H. McCrary, “A Total Absorption Ionization Chamber for 1.5–10 keV X Rays,” Nucl. Instru. Methods, 95, p. 571–583 (1971).

5. Science Applications, Inc. 1261 Birchwood Drive, Sunnyvale, California, under contract with Sandia Laboratories, Albuquerque, New Mexico.

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