Concentration Profiles of Arsenic Implanted in Silicon-Reference-Cited by-同舟云学术

Concentration Profiles of Arsenic Implanted in Silicon

Published:1973 Issue: Volume: Page:111-118
ISSN:
Container-title:Ion Implantation in Semiconductors and Other Materials
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Author:

Iwaki M.,Gamo K.,Masuda K.,Namba S.,Ishihara S.,Kimura I.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-2064-7_11.pdf

Reference11 articles.

1. J. Lindhard, M. Scharff and H.E. Schiott; kgl. Danske Videnskab. Selskab. Mat. Fys. Medd. 33 (1963) 14.

2. O.J. Marsh, R. Baron, and G.A. Shifring; Appl. Phys. Letters: 13 (1968) 199 f

3. R.A. Moline: J. Appl. Phys. 42 (1971) 3553.

4. G. Dearnaley, M.A. Wilkins, P.D. Goods, J.H. Freeman, and G.A. Gard: in Atomic collision Phenomena in Solids, edited by F D.W. Palmer, M.W. Thompson, and P.D. Townsend (American Elsevier, New York, 1970), p.633

5. K. Gamo, K. Iwaki, K. Masuda, S. Namba, S. Ishihara, and I. Kimura: Proc. 2nd Intern. Conf. on Ion Implantation in Semiconductors, Garmish-Partenkichen, 1971, p.459

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1. Impurity Profile of Implanted Ions in Silicon;Impurity Doping Processes in Silicon;1981

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3. Atom and Carrier Profiles in As Implanted Si;Ion Implantation in Semiconductors;1975

4. Electrical and backscattering measurements of arsenic implanted silicon;Applied Physics;1974-07

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